Total dose behavior of partially depleted soi dynamic threshold voltage mos (dtmos) for very low supply voltage applications (0.6 - IV)

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 613-619

  Ferlet Cavrois, V ^a   Faulet, P ^a   Musseau, O ^a   Leray, J L ^a   Faynot, O ^a   Raynaud, C ^a   Pelloie, J L ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; ELECTRIC POWER SUPPLIES TO APPARATUS; IRRADIATION; MOSFET DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

DYNAMIC THRESHOLD VOLTAGE; TOTAL DOSE IRRADIATION;

RADIATION HARDENING;

EID: 0034206608     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856488     Document Type: Article

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