High-frequency performances of a partially depleted 0.18-μ SOI/CMOS technology at low supply voltage - Influence of parasitic elements

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 265-267

  Ferlet Cavrois, V ^a   Marcandella, C ^a   Musseau, O ^a   Leray, J L ^a   Pelloie, J L ^b   Martin, F ^b   Kolev, S ^c   Pasquet, D ^c  

^a CEA DIF   (France)

^b CEA LETI   (France)

^c ENSEA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL DEVICES; FREQUENCY RESPONSE; GATES (TRANSISTOR); MICROWAVE DEVICES; OPTIMIZATION; PERFORMANCE;

TRANSISTOR GEOMETRY;

MOS DEVICES;

EID: 0032123928     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701438     Document Type: Article

References (18)

1. S. R. Wilson, M. A. Mendicino, M. L. Alles, "TFSOI circuit applications," Electrochem. Soc. Proc., vol. 97-23, p. 359-372.
2. R. A. Johnson, C. E. Chang, P. M. Asbeck, M. E. Wood, G. A. Garcia, and I. Lagnado, "Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon," IEEE Microwave Guided Wave Lett., vol. 6, Sept. 1996.
3. C. Raynaud, J. Gautier, G. Guegan, M. Lerme, E. Playez, and G. Dambrine, "High-frequency performance of submicrometer channel-length silicon MOSFET's," IEEE Electron Device Lett., vol. 12, PP. 667-669, Dec. 1991.
4. S. P. Voinigescu, S. W. Tarasewicz, T. MacElwee, and J. Ilowski, "An assessment of the state-of-the-art 0.5-μm bulk CMOS technology for RF applications," in Proc. IEDM, pp. 721-724, 1995.
5. K. Takeya, "Telecommunications LSI's using 0.25-μm CMOS/SIMOX technology," Electrochem. Soc. Proc., vol. 97-23, p. 389-400, 1997.
6. I. Lagnado and P. de la Houssaye, "TFSOS: Quo Vadis," Electrochem. Soc. Proc., vol. 97-23, p. 329-339, 1997.
7. ®) or SOI for RF applications," in IEEE Int. Conf. SOI Short Course, Oct. 1997, p. III1-III65.
8. A. L. Caviglia, R. C. Potter, and L. J. West, "Microwave performance of SOI n-MOSFET's and coplanar waveguides," IEEE Electron Device Lett., vol. 12, pp. 26-27, Jan. 1991.
9. J. P. Colinge, J. Chen, D. Flandre, J. P. Raskin, R. Gillon, and D. Vanhoenaker, "A low-voltage, low-power microwave SOI MOSFET," in IEEE Int. SOI Conf. Proc., Oct. 1996, p. 128-129.
10. V. Ferlet-Cavrois, C. Marcandella, J. L. Pelloie, C. Raynaud, and O. Faynot, "High-frequency performances of a SOI technology for low-power, low-voltage applications," Electrochem. Soc. Proc., vol. 97-23, p. 373-377, 1997.
11. A. E. Schmitz, R. H. Walden, L. E. Larson, S. E. Rosenbaum, R. A. Metzger, J. R. Behnke, and P. A. Macdonald, "A deep-submicron microwave digital CMOS/SOS technology," IEEE Electron Device Lett., vol. 12, pp. 16-17, Jan. 1991.
12. max low noise thin film silicon-on-sapphire MOSFET's," IEEE Int. SOI Conf. Proc., Oct. 1995, p. 18-19.
13. P. R. de la Houssaye, C. E. Chang, B. Offord, G. Imthurn, R. Johnson, P. M. Asbeck, G. A. Garcia, and I. Lagnado, "Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's," IEEE Electron Device Lett., vol. 16, pp. 289-292, June 1995.
14. TM-An all-silicon technology for monolithic integrated circuits," IEEE Electron Device Lett., vol. 14, pp. 219-221, May 1993.
15. J. L. Pelloie, O. Faynot, C. Raynaud, B. Dunne, F. Martin, S. Tedesco, and J. Hartmann, "A Scalable SOI technology for three successive generations: 0.18, 0.13, and 0.1 μm for low-voltage and low-power applications," IEEE Int. SOI Conf. Proc., Oct. 1996, p. 118.
16. T. Yamamoto, A. Tanabe, M. Togo, A. Furukawa, and T. Mogami, "High-frequency characteristics and its dependence on parasitic components in 0.1-μm Si-MOSFET's," in Proc. 1996 Symp. VLSI Technol. Dig. Tech. Papers, 1996, pp. 136-137.
17. G. Dambrine, A. Cappy, F. Héliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
18. C. E. Biber, M. L. Schmatz, and T. Morf, "Improvements on a MOSFET model for nonlinear RF simulations," in Microwave Theory Tech. Symp. Dig., 1997, vol. 2, pp. 865-868.