From substrate to VLSI: Investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1355-1360

  Leray, J L ^a   Dupont Nivet, E ^a   Musseau, O ^a   Coic, Y M ^a   Umbert, A ^a   Lalande, P ^a   Pere J F ^a   Auberton Herve A J ^b   Bruel, M ^b   Jaussaud, C ^b   Margail, J ^b   Giffard, B ^b   Truche, R ^b   Martin, F ^b  

^a CEA DIF   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION EFFECTS; SEMICONDUCTING SILICON; SUBSTRATES;

RADIATION HARDNESS; SILICON ON INSULATOR TECHNOLOGY; SINGLE EVENT UPSETS;

INTEGRATED CIRCUITS, VLSI;

EID: 0024173160     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25464     Document Type: Article

References (8)

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