RBS-channeling determination of damage profiles in fully relaxed Si0.76Ge0.24 implanted with 2 MeV Si ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 4, 1997, Pages 689-695

  Bianconi, M ^a   Lulli, G ^a   Spallacci, F ^a   Albertazzi, E ^a   Nipoti, R ^a   Camera, A ^b   Cellini, C ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; GERMANIUM COMPOUNDS; ION IMPLANTATION; IONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

DAMAGE CONCENTRATION PROFILES;

SILICON COMPOUNDS;

EID: 0031100722     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00788-4     Document Type: Article

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