Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 450-456

  Myoung, J M ^a   Kim, K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FILM GROWTH; GRAIN SIZE AND SHAPE; MAGNESIUM; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SURFACES; THERMAL EFFECTS;

GALLIUM NITRIDE; GROWTH TEMPERATURE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034155665     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582207     Document Type: Article

References (32)

1. R. F. Davis, Proc. IEEE 79, 702 (1991).
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
4. Z. Sitar, L. L. Smith, and R. F. Davis, J. Cryst. Growth 141, 11 (1994).
5. R. F. Davis, J. Cryst. Growth 137, 161 (1994).
6. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
7. S. Nakamura, T. Mukai, and M. Senoh, J. Appl. Phys. 76, 8189 (1994).
8. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).
9. N. Grandjean, J. Massies, M. Leroux, and P. Lorennni, Appl. Phys. Lett. 72, 82 (1998).
10. H. Riechen, R. Averbeck, A. Graber, M. Schienle, U. Strauß, and H. Tews. Mater. Res. Soc. Symp. Proc. 449, 149 (1997).
11. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L74 (1996).
12. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano, Electron. Lett. 32, 1105 (1996).
13. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L2112 (1989).
14. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 2 30, L1708 (1991).
15. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2 31, L139 (1992).
16. C. Wang and R. F. Davis, Appl. Phys. Lett. 63, 990 (1993).
17. T. D. Moustakas and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 281, 753 (1993).
18. Z. Yang, L. K. Li, and W. I. Wang, Appl. Phys. Lett. 67, 1686 (1995).
19. J. M. Myoung, K. H. Shim, C. Kim, O. Gluscnenkov, K. Kim, S. Kim, D. A. Turnbull, and S. G. Bishop, Appl. Phys. Lett. 69, 2722 (1996).
20. J. M. Myoung. K. H. Shim, O. Gluschenkov, C. Kim, K. Kim, S. Kim, and S. G. Bishop, J. Cryst. Growth 182, 241 (1997).
21. J. Neugebauer and C. G. Van de Walle, Mater. Res. Soc. Symp. Proc. 395, 645 (1996).
22. R. Beresford, K. S. Stevens, Q. Cui, A. Schwartzman, and H. Cheng, Mater. Res. Soc. Symp. Proc. 449, 361 (1997).
23. J. M. Myoung, Ph.D. dissertation, University of Illinois at Urbana-Champaign, 1998.
24. J. M. Myoung, O. Gluschenkov, K. Kim, and S. Kim, J. Vac. Sci. Technol. A 17, 3019 (1999).
25. C. Kim, I. K. Robinson, J. M. Myoung, K. H. Shim, M. C. Yoo, and K. Kim, Appl. Phys. Lett. 69, 2358 (1996).
26. O. Brandt, H. Yang, A. Trampert, and K. H. Ploog, Mater. Res. Soc. Symp. Proc. 395, 27 (1996).
27. H. Fujii, C. Kisielowski, J. Krueger, M. S. H. Leung, R. Klockenbrink, M. Rubin, and E. R. Weber, Mater. Res. Soc. Symp. Proc. 449, 227 (1997).
28. T. Ohno, K. Shiraishi, and T. Ito, Mater. Res. Soc. Symp. Proc. 362, 27 (1994).
29. J. H. Neave, P. J. Dobson, B. A. Joyce, and J. Zhang, Appl. Phys. Lett. 47, 100 (1985).
30. W. Faschinger, J. Nürnberger, and M. Korn, Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes. Chiba, Japan, 1996 (unpublished).
31. N. F. Mott, Proc. Phys. Soc., London, Sect. A 62, 416 (1949); Metal- Insulator Transition (Taylor & Francis, London, 1990), pp. 145-169.
32. N. F. Mott, Proc. Phys. Soc., London, Sect. A 62, 416 (1949); Metal-Insulator Transition (Taylor & Francis, London, 1990), pp. 145-169.