Impact of growth temperature, pressure, strain on the morphology of GaN films

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 227-232

  Fujii, H ^a   Kisielowshi, C ^a   Kruger, J ^a   Leung, M S H ^a   Klockenbrink, R ^a   Rubin, M ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0030644722     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)