Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 182, Issue 3-4, 1997, Pages 241-246

  Myoung, J M ^a   Shim, K H ^a   Gluschenkov, O ^a   Kim, C ^b   Kim, K ^a   Kim, S ^a   Bishop, S G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b United States of America   (United States)

Author keywords

Hall measurement; P type GaN; Photoluminescence; Plasma assisted MBE; SIMS; XRC

Indexed keywords

CARRIER CONCENTRATION; FILM GROWTH; MAGNESIUM; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; PLASMA SOURCES; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

FULL WIDTH AT HALF MAXIMUM (FWHM); PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PAMBE); RADIO FREQUENCY (RF) PLASMA SOURCES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031550036     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00380-1     Document Type: Article

References (25)

1. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28 (1989) L2112.
2. S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, Jpn. J. Appl. Phys. 31 (1992) L139.
3. S. Nakamura, N. Iwasa, M. Senoh, T. Mukai, Jpn. J. Appl. Phys. 31 (1992) 1258.
4. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76 (1994) 1363.
5. S.S. Liu, T.R. Cass, D.A. Stevenson, J. Electron. Mater. 6 (1977) 237.
6. S. Nakamura, M. Senoh, T. Mukai, Jpn. J. Appl. Phys. 30 (1991) L1708.
7. C. Wang, R.F. Davis, Appl. Phys. Lett. 63 (1993) 990.
8. R.J. Molnar, R. Singh, T.D. Moustakas, Appl. Phys. Lett. 66 (1995) 268.
9. Z. Yang, L.K. Li, W.I. Wang, Appl. Phys. Lett. 67 (1995) 1686.
10. J.M. Myoung, C. Kim, K.H. Shim, O. Gluschenkov, K. Kim, M.C. Yoo, Mater. Res. Soc. Symp. Proc. 423, 1996, p. 385.
11. J.M. Myoung, K.H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D.A. Turnbull, S.G. Bishop, Appl. Phys. Lett. 69 (1996) 2722.
12. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 64 (1994) 1687.
13. S. Nakamura, T. Mukai, M. Senoh, J. Appl. Phys. 76 (1994) 8189.
14. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Appl. Phys. Lett. 68 (1996) 3269.
15. O. Gluschenkov, J.M. Myoung, K.H. Shim, K. Kim, Z.G. Fogen, J. Gao, J.G. Eden, Appl. Phys. Lett. 70 (1997), in press.
16. D. Korakakis, A. Sampath, H.M. Ng, G. Morales, I.D. Goepfert, T.D. Moustakas, Mater. Res. Soc. Symp. Proc. 395, 1995, p. 151.
17. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, K. Oki, J. Crystal Growth 115 (1991) 628.
18. I. Akasaki, H. Amano, J. Crystal Growth 163 (1996) 86.
19. S. Ruvimov, Z. Liliental-Weber, T. Suski, J.W. Ager III, J. Washburn, J. Krueger, C. Kisielowski, E.R. Weber, H. Amano, I. Akasaki, Appl. Phys. Lett. 69 (1996) 990.
20. W. Faschinger, J. Nürnberger, M. Korn, Proc. Int. Symp. Blue Laser and Light Emitting Diodes, 1996, Chiba, Japan.
21. J. Neugebauer, C.G. Van de Walle, Mater. Res. Soc. Symp. Proc. vol. 395, 1996, p. 645; J. Neugebauer, C.G. Van de Walle, Phys. Rev. B 50 (1994) 8067.
22. J. Neugebauer, C.G. Van de Walle, Mater. Res. Soc. Symp. Proc. vol. 395, 1996, p. 645; J. Neugebauer, C.G. Van de Walle, Phys. Rev. B 50 (1994) 8067.
23. P.W. Anderson, Phys. Rev. 109 (1958) 1492.
24. N.F. Mott, E.A. Davis, Electronic Process in Non-Crystalline Materials, Oxford University Press, London, 1979, ch. 2, pp. 37-39, ch. 4, pp. 111-127.
25. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer, Berlin, 1984, ch. 3, pp. 52-65.