Material and device characteristics of MBE-grown GaN using a new rf plasma source

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 361-366

  Beresford, R ^a   Stevens, K S ^a   Cui, Q ^a   Schwartzman, A ^a   Cheng, I I ^a  

^a BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MICROSCOPIC EXAMINATION; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0030697565     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)