Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 706-712

  Jiang, Z X ^a,b   Alkemade, P F A ^a   Tung, C H ^b   Wang, J L F ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); ION BOMBARDMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ATMOSPHERIC-PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); FULL WIDTH AT HALF MAXIMUM (FWHM); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SEMICONDUCTING SILICON;

EID: 0034155539     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591263     Document Type: Article

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