Nitride based high power devices: Design and fabrication issues

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2289-2294

  Bandic Z Z ^a   Piquette, E C ^a   Bridger, P M ^a   Beach, R A ^a   Kuech, T F ^b   Mcgill, T C ^a  

^a California Institute of Technology   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON BEAMS; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; THYRISTORS;

GALLIUM NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 0032301535     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00227-5     Document Type: Article

References (11)

1. Perkins, N. R., Horton, M. N., Bandić, Z. Z., McGill, T. C. and Kuech, T. F., Mater. Res. Soc. Symp. Proc., 1996, 395, 243.
2. Kinzer, D., International rectifier, private communication.
3. Bandić, Z. Z. and McGill, T. C., in preparation.
4. Chow, T. P. and Tyagi, R., IEEE Trans. Electron Devices, 1994, 41, 1481.
5. Sze, S., Semiconductor Devices. Wiley, New York, 1981.
6. Shur, M. S.et al., Inst. Phys. Conf. Ser., 1994, 141, 419.
7. Khan, M. P., Chen, O., Sudarshan, T. S. and Gradinaru, G., Appl. Phys. Lett., 1996, 69, 254.
8. Bandić, Z. Z., Bridger, P. M., Piquette, E. C., Kuech, T. F. and McGill, T. C. MRS Conference, Spring, 1998, submitted.
9. Ponce, F. A., MRS Bull., 1997, 22, 51.
10. Piquette, E. C., Bandić, Z. Z., McGill, T. C. Mater. Res. Soc. Symp. Proc., Fall, 1997, to be published.
11. Bandić, Z. Z., McGill, T. C. and Ikonić, Z., Phys. Rev. B, 1997, 56, 3564.