Metalorganic chemical vapor deposition-grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 212-216

  Tin, C C ^a   Song, Y ^a   Isaacs Smith, T ^a   Madangarli, V ^b   Sudarshan, T S ^b  

^a AUBURN UNIVERSITY   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

6H SiC; AlN; Capacitance voltage (C V); High electric field breakdown; Low pressure metalorganic chemical vapor deposition (MOCVD); Metal insulator semiconductor devices

Indexed keywords

EID: 0342457638     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0153-1     Document Type: Article

References (9)

1. J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper, Jr., J.W. Palmour and K.G. Irvine, J. Electron. Mater. 24, 303 (1995).
2. L.A. Lipkin and J.W. Palmour, J. Electron. Mater. 25, 909 (1996).
3. S. Sridevan, V. Misra, P.K. McLarty, B.J. Baliga and J.J. Wortman, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 645.
4. J.N. Shenoy, M.K. Das, G.L. Chindalore, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour and K.G. Irvine, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 745.
5. C.I. Harris, M.O. Aboelfotoh, R.S. Kern, S. Tanaka and R.F. Davis, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 777.
6. C.M. Zetterling, K. Wongchotigul, M.G. Spencer, C.I. Harris, S.S. Wong and M. Ostling, Mater. Res. Soc. Symp. Proc. 423, (Pittsburgh, PA: Mater. Res. Soc., 1996),p. 667.
7. J.B. Casady, R.W. Johnson, C.D. Ellis, R. Hu, C.C. Tin, T. Isaacs-Smith, W.C. Neely and T. Kwasigroh, Proc. Third Intl. High Temperature Electronics Conf., Albuquerque, NM, (1996), p. IX-27.
8. C.C. Tin, R. Hu, R.L. Coston and J. Park, J. Cryst. Growth 148, 116 (1995).
9. T.S. Sudarshan, V.P. Madangarli, G. Gradinaru, C.C. Tin, R. Hu and T. Isaacs-Smith, Mater. Res. Soc. Symp. Proc. 423, (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 99.