Structural, optical and electronic properties of oxidized AIN thin films at different temperatures

Journal of Electronic Materials

Volumn 27, Issue 7, 1998, Pages 918-922

  Chowdhury, Enam Ahmed ^a   Dashiell, M ^a   Qiu, G ^a   Olowolafe, J O ^a   Jonczyk, R ^a   Smith, D ^a   Barnett, A ^a   Kolodzey, J ^a   Unruh, K M ^a   Swann, C P ^b   Suehle, John ^c   Chen, Yuan ^d  

^a UNIVERSITY OF DELAWARE   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

Author keywords

AlN; Aluminum oxide; Gate insulators; Thermal oxidation; Thin films

Indexed keywords

EID: 0002127377     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0119-y     Document Type: Article

References (13)

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