Growth of AlN films by magnetron sputtering

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 448-451

  Uchiyama, S ^a   Ishigami, Y ^a   Ohta, M ^a   Niigaki, M ^a   Kan, H ^a   Nakanishi, Y ^b   Yamaguchi, T ^b  

^a CENTRAL RESEARCH LABORATORY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

AlN; Magnetron sputtering; RHEED; XRD

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; MAGNETRON SPUTTERING; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

CRYSTAL QUALITY;

SEMICONDUCTING FILMS;

EID: 0032094521     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00328-5     Document Type: Article

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