Polarity, morphology and reactivity of epitaxial GaN films on Al2O3(0001)

Physica Status Solidi (A) Applied Research

Volumn 177, Issue 1, 2000, Pages 5-14

  Starke, U ^a   Sloboshanin, S ^b   Tautz, F S ^b   Seubert, A ^a   Schaefer, J A ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; CHEMICAL BONDS; CRYSTAL ORIENTATION; GAS ADSORPTION; HYDROGEN; MOLECULAR VIBRATIONS; MORPHOLOGY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE CHEMISTRY;

CHEMICAL REACTIVITY; GALLIUM NITRIDE; POLARITY;

SEMICONDUCTING FILMS;

EID: 0033895897     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(200001)177:1<5::AID-PSSA5>3.0.CO;2-K     Document Type: Article

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