Effects of deep level defects in semiconductor detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 234-243

  Lutz, G ^a  

^a MPI HALBLEITERLABOR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PARTICLE ACCELERATORS; RADIATION DETECTORS; SEMICONDUCTOR MATERIALS; THERMODYNAMIC STABILITY;

CONTINUITY EQUATIONS; DEEP LEVEL DEFECTS; MACROSCOPIC PROPERTIES; MICROSCOPIC PROPERTIES; POISSON EQUATIONS; SEMICONDUCTOR DETECTORS; SPACE CHARGE DEPLETION; THERMAL EQUILIBRIUM;

RADIATION EFFECTS;

EID: 0030214788     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00025-3     Document Type: Article

References (7)

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2. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461; S.D. Brotherton et al., J. Appl. Phys. 53 (1982) 5720; Chen et al., Ann. Rev. Mater. Sci. 69 (1991) 3396; E. Fretwurst et al., these Proceedings (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A 377 (1996) 258. B.C. Svenson et al., Phys. Rev. B 43 (1991) 2292.
3. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461; S.D. Brotherton et al., J. Appl. Phys. 53 (1982) 5720; Chen et al., Ann. Rev. Mater. Sci. 69 (1991) 3396; E. Fretwurst et al., these Proceedings (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A 377 (1996) 258. B.C. Svenson et al., Phys. Rev. B 43 (1991) 2292.
4. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461; S.D. Brotherton et al., J. Appl. Phys. 53 (1982) 5720; Chen et al., Ann. Rev. Mater. Sci. 69 (1991) 3396; E. Fretwurst et al., these Proceedings (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A 377 (1996) 258. B.C. Svenson et al., Phys. Rev. B 43 (1991) 2292.
5. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461; S.D. Brotherton et al., J. Appl. Phys. 53 (1982) 5720; Chen et al., Ann. Rev. Mater. Sci. 69 (1991) 3396; E. Fretwurst et al., these Proceedings (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A 377 (1996) 258. B.C. Svenson et al., Phys. Rev. B 43 (1991) 2292.
6. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461; S.D. Brotherton et al., J. Appl. Phys. 53 (1982) 5720; Chen et al., Ann. Rev. Mater. Sci. 69 (1991) 3396; E. Fretwurst et al., these Proceedings (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A 377 (1996) 258. B.C. Svenson et al., Phys. Rev. B 43 (1991) 2292.
7. G. Lutz, Effects of deep level defects in semiconductors derived from first principles, MPI report, in preparation.