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Journal of Radioanalytical and Nuclear Chemistry

Volumn 239, Issue 1, 1999, Pages 207-211

Factors determining the lifetime damage coefficients and the low-frequency noise in MeV proton irradiated silicon diodes

(5) Simoen, E a Claeys, C a Ohyama, H b Takami, Y c Sunaga, H d

a IMEC (Belgium)

b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY (Japan)

c RIKKYO UNIVERSITY (Japan)

d JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

CONFERENCE PAPER; DIODE; NOISE; PROTON RADIATION; RADIATION INJURY;

EID: 0032957839 PISSN: 02365731 EISSN: None Source Type: Journal
DOI: 10.1007/BF02349558 Document Type: Article

Times cited : (2)

References (19)

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