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Physica Status Solidi (A) Applied Research

Volumn 163, Issue 1, 1997, Pages 27-32

Investigation of radiation damage in silicon produced by fast neutron irradiation with lifetime measurements and deep level transient spectroscopy

(3) Stefanov, K D a Hardalov, Ch M a,b Sueva, D a

a UNIVERSITY OF SOFIA (Bulgaria)

b ASSUMPTION UNIVERSITY (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; NEUTRON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR DIODES;

SHOCKLEY HALL READ (SHR) THEORY;

SEMICONDUCTING SILICON;

EID: 0031235918 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(199709)163:1<27::AID-PSSA27>3.0.CO;2-W Document Type: Article

Times cited : (4)

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