Growth and device performance of GaN schottky rectifiers

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Chyi, Jen Inn ^a   Lee, C M ^a   Chuo, C C ^a   Chi, G C ^a   Dang, G T ^b   Zhang, A P ^b   Ren, Fan ^b   Cao, X A ^b   Pearton, S J ^b   Chu, S N G ^c   Wilson, R G ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b University of Florida   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RECTIFIERS; ENERGY DISSIPATION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILANES; SWITCHES;

CARRIER STORAGE EFFECTS; ION MASS SPECTROMETRY; SCHOTTKY DIODE RECTIFIERS; SCHOTTKY RECTIFIERS;

GALLIUM NITRIDE;

EID: 3543148449     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000648     Document Type: Article

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