Measurement of wave-front aberrations in high-resolution optical lithographic systems from printed photoresist patterns

IEEE Transactions on Semiconductor Manufacturing

Volumn 13, Issue 1, 2000, Pages 24-33

  Yeung, Michael S ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; ERROR ANALYSIS; LENSES; OPTICAL RESOLVING POWER; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE; WAVEFRONTS;

OPTICAL LITHOGRAPHIC SYSTEMS;

PHOTORESISTS;

EID: 0033871370     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.827337     Document Type: Article

References (19)

1. D. G. Flagello and B. Geh, "Lithographic lens testing: Analysis of measured aerial images, interferometric data and photoresist measurements," in Proc. SPIE's Ninth Annu. Int. Symp. Microlithography, vol. 2726, 1996, pp. 788-798.
2. S. Hirukawa, K. Matsumoto, and K. Takemasa, "New projection optical system for beyond 150nm patterning with KrF and ArF sources," in Proc. SPIE's 11th Annu. Int. Symp. Microlithography, vol. 3334, 1998, pp. 414-422.
3. C. H. Fields, W. N. Partlo, and W. G. Oldham, "Aerial image measurements on a commercial stepper," in Proc. SPIE's Seventh Annu. Int. Symp. Microlithography, vol. 2197, 1994, pp. 585-595.
4. J. P. Kirk and T. A. Brunner, "Measurement of microlithographic aerial image quality," in Proc. SPIE's Ninth Annu. Int. Symp. Microlithography, vol. 2726, 1996, pp. 410-416.
5. R. M. von Bunau, H. Fukuda, and T. Terasawa, "Phase retrieval from defocused images and its applications in lithography," Japanese J. Appl. Phys., vol. 36, pp. 7494-7498, 1997.
6. T. Sato and H. Nomura, "Coma aberration measurement by relative shift of displacement with pattern dependence," Japanese J. Appl. Phys., vol. 37, pp. 3553-3557, 1998.
7. C. Progler, H. Du, and G. Wells, "Potential causes of across field CD variation," in Proc. SPIE's Tenth Annu. Int. Symp. Microlithography, vol. 3051, 1997, pp. 660-671.
8. J. P. Kirk, "Measurement of astigmatism in microlithography lenses," in Proc. SPIE's 11th Annu. Int. Symp. Microlithography, vol. 3334, 1998, pp. 848-854.
9. I. Tsukamoto and H. Shinonaga, "New distortion metrology using reticle coordinate error," in Proc. SPIE's 11th Annu. Int. Symp. Microlithography, vol. 3334, 1998, pp. 940-950.
10. W. J. Smith, Modern Optical Engineering, 2nd ed. New York: McGraw-Hill, 1990, ch. 3, pp. 59-60.
11. H. Nomura and T. Sato, "Overlay error due to lens coma and asymmetric illumination dependence of pattern feature," in Proc. SPIE's 11th Annu. Int. Symp. Microlithography, vol. 3332, 1998, pp. 199-210.
12. T. A. Brunner and R. A. Ferguson, "Approximate models for resist processing effects," in Proc. SPIE's Ninth Annu. Int. Symp. Microlithography, vol. 2726, 1996, pp. 198-207.
13. SPLAT Version 5.0 Users' Guide, Electronics Research Laboratory, Univ. California, Berkeley, CA, 1995.
14. M.S. Yeung, D. Lee, R. Lee, and A. R. Neureuther, "Extension of the Hopkins theory of partially coherent imaging to include thin-film interference effects," in Proc. SPIE's Sixth Annu. Int. Symp. Microlithography, vol. 1927, 1993, pp. 452-463.
15. SAMPLE Version 1.8b User Guide, Electronics Research Laboratory, Univ. California, Berkeley, CA, 1991.
16. R. A. Ferguson, J. M. Hutchinson, C. A. Spence, and A. R. Neureuther, "Modeling and simulation of a deep-ultraviolet acid hardening resist," J. Vac. Sci. Technol. B, vol. 8, pp. 1423-1427, 1990.
17. M. Op de Beeck et al., "Bottom-ARC optimization methodology for 0.25 μm lithography and beyond," in Proc. SPIE's 11th Annu. Int. Symp. Microlithography, vol. 3334, 1998, pp. 322-336.
18. T. A. Brunner, "Impact of lens aberrations on optical lithography," IBM J. Res. Dev, vol. 41, pp. 57-67, 1997.
19. D. G. Flagello et al., "Toward a comprehensive control of full-field image quality in optical photolithography," in Proc. SPIE Tenth Annu. Int. Symp. Microlithography, vol. 3051, 1997, pp. 672-685.