Compact non-local modeling of impact ionization in SOI MOSFETs for optimal CMOS device/circuit design

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 661-668

  Krishnan, S ^a   Fossum, J G ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; IONIZATION; MATHEMATICAL MODELS; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

CIRCUIT SIMULATOR SOISPICE; DRAIN SOURCE BREAKDOWN; ENERGY BALANCE EQUATION; IONIZATION CURRENT;

MOSFET DEVICES;

EID: 0030150941     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00198-0     Document Type: Article

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