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Volumn 47, Issue 6, 2000, Pages 1139-1151

Stepping toward standard methods of small-signal parameter extraction for HBT's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; FREQUENCIES; PARAMETER ESTIMATION; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033749599     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842955     Document Type: Article
Times cited : (44)

References (33)
  • 1
    • 0027816267 scopus 로고
    • GaAs HBT's for microwave integrated circuits
    • Dec.
    • B. BayraktarogluGaAs HBT's for microwave integrated circuits Proc. IEEE, vol. 81, 1762-1785, Dec. 1993.
    • (1993) Proc. IEEE , vol.81 , pp. 1762-1785
    • Bayraktaroglu, B.1
  • 2
    • 0027887957 scopus 로고
    • GaAs-based heterojunction bipolar transistors for very high performance electronic circuits
    • Dec.
    • P. M. Asbeck et al.GaAs-based heterojunction bipolar transistors for very high performance electronic circuits Proc. IEEE, vol. 81, 1709-1726, Dec. 1993.
    • (1993) Proc. IEEE , vol.81 , pp. 1709-1726
    • Asbeck, P.M.1
  • 3
    • 0026221708 scopus 로고
    • Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
    • D. Costa, W. U. Liu, and J. S. Harris Jr.Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit IEEE Trans. Electron Devices, vol. 38, 2018-2024, Sept. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 2018-2024
    • Costa, D.1    Liu, W.U.2    Harris Jr., J.S.3
  • 4
    • 84939361544 scopus 로고
    • Evaluation of the factors determining HBT high-frequency performance by direct analysis of 5-parameter data
    • Dec.
    • D. R. Pehlke and D. PavlidisEvaluation of the factors determining HBT high-frequency performance by direct analysis of 5-parameter data IEEE Trans. Microwave Theory Tech., vol. 40, 2367-2373, Dec. 1992.
    • (1992) IEEE Trans. Microwave Theory Tech. , vol.40 , pp. 2367-2373
    • Pehlke, D.R.1    Pavlidis, D.2
  • 5
    • 0032652480 scopus 로고    scopus 로고
    • Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors
    • June
    • M. Sotoodeh et alDirect extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors IEEE Trans. Electron Devices, vol. 46, 1081-1086,June 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1081-1086
    • Sotoodeh, M.1
  • 6
    • 0029378254 scopus 로고
    • Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
    • Sept.
    • C.-J. Wei and J. C. M. HwangDirect extraction of equivalent circuit parameters for heterojunction bipolar transistors IEEE Trans. Microwave Theory Tech., vol. 43, 2035-2040, Sept. 1995.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , pp. 2035-2040
    • Wei, C.-J.1    Hwang, J.C.M.2
  • 7
    • 0031165094 scopus 로고    scopus 로고
    • DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization
    • June
    • A. Samelis and D. PavlidisDC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization IEEE Trans. Microwave Theory Tech., vol. 45, 886-897, June 1997.
    • (1997) IEEE Trans. Microwave Theory Tech. , vol.45 , pp. 886-897
    • Samelis, A.1    Pavlidis, D.2
  • 9
    • 0029272049 scopus 로고
    • Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured 5-parameters
    • Mar.
    • U. Schaper and B. HolzapflAnalytical parameter extraction of the HBT equivalent circuit with T-like topology from measured 5-parameters IEEE Trans. Microwave Theory Tech., vol. 43, 493-498, Mar. 1995.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , pp. 493-498
    • Schaper, U.1    Holzapfl, B.2
  • 10
    • 0030787660 scopus 로고    scopus 로고
    • A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)
    • Jan.
    • J. M. M. Rios, L. M. Lunardi, S. Chandrasekhar, and Y. MiyamotoA self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's) IEEE Trans. Microwave Theory Tech., vol. 45, 39-45, Jan. 1997.
    • (1997) IEEE Trans. Microwave Theory Tech. , vol.45 , pp. 39-45
    • Rios, J.M.M.1    Lunardi, L.M.2    Chandrasekhar, S.3    Miyamoto, Y.4
  • 11
    • 0030783391 scopus 로고    scopus 로고
    • Analysis of device parameters for pnp-type AlGaAs/GaAs HBT's including highinjection using new direct parameter extraction
    • Jan.
    • A. Kameyama, A. Massengale, C. Dai, and J. S. Harris Jr.Analysis of device parameters for pnp-type AlGaAs/GaAs HBT's including highinjection using new direct parameter extraction IEEE Trans. Electron Devices, vol. 44, 1-10, Jan. 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1-10
    • Kameyama, A.1    Massengale, A.2    Dai, C.3    Harris Jr., J.S.4
  • 13
    • 0025465290 scopus 로고
    • Broad-band determination of the FET smallsignal equivalent circuit
    • July
    • M. Berrothand R. BoschBroad-band determination of the FET smallsignal equivalent circuitlEEETrans. Microwave Theory Tech., vol. 38, 891-895, July 1990.
    • (1990) LEEETrans. Microwave Theory Tech. , vol.38 , pp. 891-895
    • Berrothand, M.1    Bosch, R.2
  • 14
    • 0032665658 scopus 로고    scopus 로고
    • Basic expressions and approximations in smallsignal parameter extraction for HBT's
    • May
    • B. Li and S. PrasadBasic expressions and approximations in smallsignal parameter extraction for HBT's IEEE Trans. Microwave Theory Tech., vol. 47, 534-539, May 1999.
    • (1999) IEEE Trans. Microwave Theory Tech. , vol.47 , pp. 534-539
    • Li, B.1    Prasad, S.2
  • 15
    • 0001495817 scopus 로고    scopus 로고
    • A semianalytical parameter-extraction procedure for HBT equivalent circuit
    • Oct.
    • B. Li, S. Prasad, L.-W. Yang, and S. C. WangA semianalytical parameter-extraction procedure for HBT equivalent circuit IEEE Trans. Microwave Theory Tech., vol. 46, 1427-1435, Oct. 1998.
    • (1998) IEEE Trans. Microwave Theory Tech. , vol.46 , pp. 1427-1435
    • Li, B.1    Prasad, S.2    Yang, L.-W.3    Wang, S.C.4
  • 18
    • 0030813260 scopus 로고    scopus 로고
    • A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
    • Jan.
    • Y Gobert, P. J. Tasker, and K. H. BachernA physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor IEEE Trans. Microwave Theory Tech., vol. 45, 149-153, Jan. 1997.
    • (1997) IEEE Trans. Microwave Theory Tech. , vol.45 , pp. 149-153
    • Gobert, Y.1    Tasker, P.J.2    Bachern, K.H.3
  • 19
    • 0033080162 scopus 로고    scopus 로고
    • Extrapolated /mi>x of heterojunction bipolar transistors
    • Feb.
    • M. Vaidyanathan and D. L. PulfreyExtrapolated /mi>x of heterojunction bipolar transistors IEEE Trans. Electron Devices, vol. 46, 301-309, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 301-309
    • Vaidyanathan, M.1    Pulfrey, D.L.2
  • 20
    • 0030195615 scopus 로고    scopus 로고
    • Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors
    • July
    • R. Anholt et al.Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors Solid-State Electron., vol. 39, 961-963, July 1996.
    • (1996) Solid-State Electron. , vol.39 , pp. 961-963
    • Anholt, R.1
  • 23
    • 0032653049 scopus 로고    scopus 로고
    • Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
    • Apr.
    • D. A. Ahmari et al.Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior IEEE Trans. Electron Devices, vol. 46, 634-640, Apr. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 634-640
    • Ahmari, D.A.1
  • 24
    • 0033079483 scopus 로고    scopus 로고
    • Effects of pad and interconnection parasitics on forward transit time in HBT's
    • Feb.
    • S. LeeEffects of pad and interconnection parasitics on forward transit time in HBT's IEEE Trans. Electron Devices, vol. 46, 275-280, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 275-280
    • Lee, S.1
  • 25
    • 0030286665 scopus 로고    scopus 로고
    • Forward transit time measurement for heterojunction bipolar transistors using simple Z parameter equation
    • Nov.
    • -Forward transit time measurement for heterojunction bipolar transistors using simple Z parameter equation IEEE Trans. Electron Devices, vol. 43, 2027-2029, Nov. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 2027-2029
  • 26
    • 0026852206 scopus 로고
    • Derivation of the emitter-collector transit time of heterojunction bipolar transistors
    • Apr.
    • W. Liu, D. Costa, and J. S. Harris Jr.Derivation of the emitter-collector transit time of heterojunction bipolar transistors Solid-State Electron., vol. 35, 541-545, Apr. 1992.
    • (1992) Solid-State Electron. , vol.35 , pp. 541-545
    • Liu, W.1    Costa, D.2    Harris Jr., J.S.3
  • 27
    • 0024122579 scopus 로고
    • Unilateral gain of heterojunction bipolar transistors at microwave frequencies
    • Dec.
    • S. Prasad, W. Lee, and C. G. FonstadUnilateral gain of heterojunction bipolar transistors at microwave frequencies IEEE Trans. Electron Devices, vol. 35, 2288-2294, Dec. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 2288-2294
    • Prasad, S.1    Lee W2    Fonstad, C.G.3
  • 28
    • 0032074724 scopus 로고    scopus 로고
    • Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs
    • B. Ihn et al.Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs Electron. Lett., vol. 34, 1031-1033, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 1031-1033
    • Ihn, B.1
  • 30
    • 0032624230 scopus 로고    scopus 로고
    • Reduction of the base-collector capacitance in InP/GalnAs heterojunction bipolar transistors due to electron velocity modulation
    • Apr.
    • Y. Betser and D. RitterReduction of the base-collector capacitance in InP/GalnAs heterojunction bipolar transistors due to electron velocity modulation IEEE Trans. Electron Devices, vol. 46, 628-633, Apr. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 628-633
    • Betser, Y.1    Ritter, D.2
  • 31
    • 0024016395 scopus 로고
    • High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors
    • May
    • M. B. DasHigh-frequency performance limitations of millimeter-wave heterojunction bipolar transistors IEEE Trans. Electron Devices, vol. 35, 604-614, May 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 604-614
    • Das, M.B.1
  • 33
    • 0041472879 scopus 로고
    • Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs
    • K. Beyzavi et al.Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs Appl. Phys. Lett., vol. 58, no. 12, 1268-1270, 1991.
    • (1991) Appl. Phys. Lett. , vol.58 , Issue.12 , pp. 1268-1270
    • Beyzavi, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.