Analysis of device parameters for pnp-Type AlGaAs/GaAs HBT's including high-injection using new direct parameter extraction

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 1-10

  Kameyama, Atsushi ^a   Massengale, Alan ^b   Dai, Changhong ^c   Harris Jr , James S ^c  

^a STANFORD UNIVERSITY   (United States)

^b TOSHIBA CORPORATION   (Japan)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; LEAST SQUARES APPROXIMATIONS; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; Z TRANSFORMS;

DIRECT PARAMETER EXTRACTION; FALL-OFF FREQUENCY; INTRINSIC TRANSIT TIME; SMALL SIGNAL T EQUIVALENT CIRCUIT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030783391     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.554784     Document Type: Article

References (13)

1. K.W. Kobayashi, D. K. Umemoto, J. R. Velebir Jr., A. K. Oki, and D. C. Streit, "Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads," IEEE J. Solid State Circuits, vol. 28, no. 10, pp. 1011-1017, Oct. 1993.
2. H.Q. Tserng, D. G. Hill, and T. S. Kirn, "A 0.5 W complementary AlGaAs-GaAs HBT push-pull amplifier at 10 GHz," IEEE Microwave Guided Wave Lett., vol. 3, no. 2, pp. 457, Feb. 1993.
3. D. Costa, W. L. Liu, and J. S. Harris, "Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit," IEEE Trans. Electron Devices, vol. 38, pp. 2018-2024, Sept. 1991.
4. D.R. Pehlke and D. Pavlidis, "Evaluation of the factors determining HBT high-frequency performance by direct analysis of 5-parameter data," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2367-2373, Dec. 1992.
5. D. Wu, D. L. Miller, M. Fukuda, and Y. Yun, "Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters," GaAs 1C Symp. 93 Tech. Dig., 1993. pp. 259-262.
6. U. Schaper and B. Holzapfi, "Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured 5-parameters," IEEE Trans. Electron Devices, vol. 43, pp. 493-498, Mar. 1995.
7. A.P. Laser and D. L. Pulfrey, "Reconciliation of methods for estimating /max for microwave heterojunction transistors," IEEE Trans. Electron Devices, vol. 38, pp. 1685-1692, Aug. 1991.
8. P.R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd Ed. New York: Wiley, 1993.
9. S. Prasad, W. Lee, and C. G. Fonstad, "Unilateral gain of heterojunction bipolar transistors at microwave frequencies," IEEE Trans. Electron Devices, vol. 35, pp. 2288-2294, Dec. 1988.
10. G.F. Engen and C. A. Hoer, "Through-reflect-line: An improved technique for calibrating the dual six-port automatic network analyzer," IEEE Trans. Microwave Theory Tech., vol. 12, pp. 987-993, Dec. 1979.
11. A. Davidson, K. Jones, and E. Strid, "LRM and LRRM calibrations with automatic determination of load inductance," 36th ARFTG Conf., Tech. Dig., Nov. 1990, pp. 57-62.
12. A. Kameyama, A. Massengale, C. Dai, and J. S. Harris Jr., "Aluminum graded-base AlGaAs/GaAs pnp HBT with 37 GHz cut-off frequency," in IEEE IEDM Tech. Dig., pp. 183-186, Dec. 1994.
13. K. Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaki, Y. Ohashi, and T. Saito, "An approach to determining an equivalent circuit for HEMT's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 499-503, Mar. 1995.