SCOPUS 정보 검색 플랫폼

Volumn 43, Issue 11, 1996, Pages 2027-2029

Forward transit time measurement for heterojunction bipolar transistors using simple Z parameter equation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE MEASUREMENT;

COLLECTOR RESISTANCE; FORWARD TRANSIT TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030286665 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.543045 Document Type: Article

Times cited : (6)

References (8)

1
- 0026203903
- S. Lee A. Gopinath S. J. Pachuta Accurate measurement technique for the base transit time in heterojunction bipolar transistors Electron. Lett. 27 1551 1553 1991 2220 3646 132801
- (1991) , vol.27 , pp. 1551-1553
- Lee, S.¹ Gopinath, A.² Pachuta, S.J.³

2
- 0026836812
- P. C. Grossman J. C. Choma Large signal modeling of HBT's including self-heating and transit time effects IEEE Trans. Microwave Theory Tech. 40 449 464 1992 22 3466 121720
- (1992) , vol.40 , pp. 449-464
- Grossman, P.C.¹ Choma, J.C.²

3
- 0028377237
- S. Lee B. R. Ryum S. W. Kang A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors IEEE Trans. Electron Devices 41 233 238 1994 16 6850 277373
- (1994) , vol.41 , pp. 233-238
- Lee, S.¹ Ryum, B.R.² Kang, S.W.³

4
- 85176683739
- D. L. Harame J. Stock B. Meyerson J. Cotte K. Jenkins P. Restle E. Crabbe S. Subbanna J. Cressler K. Hsu T. E. Tice B. W. Scharf J. A. Yasaitis Optimization of SiGe HBT technology for high-speed analog and mixed-signal applications IEDM Tech. Dig. 71 74 1993 1088 8045 347396
- (1993) , pp. 71-74
- Harame, D.L.¹ Stock, J.² Meyerson, B.³ Cotte, J.⁴ Jenkins, K.⁵ Restle, P.⁶ Crabbe, E.⁷ Subbanna, S.⁸ Cressler, J.⁹ Hsu, K.¹⁰ Tice, T.E.¹¹ Scharf, B.W.¹² Yasaitis, J.A.¹³

5
- 85176670250
- 2nd Wiley New York
- S. M. Sze Physics of Semiconductor Devices 2nd 46 1981 Wiley New York
- (1981) , pp. 46
- Sze, S.M.¹

6
- 85176678190
- D. R. Pehlke D. Pavlidis New analytic determination of $f_{T},$ $f_{{\\rm MAX}}$ and the frequency dependence of current gain and power gain in HBT's Proc. IEEE/Cornell Conf. Advanced Concepts in High-Speed Semicond. Devices and Circuits 75 82 1993 1045 7465 303071
- (1993) , pp. 75-82
- Pehlke, D.R.¹ Pavlidis, D.²

7
- 85176667474
- T. I. Kamins K. Nauka L. H. Camnitz J. B. Kruger J. E. Turner S. J. Rosner M. P. Scott J. L. Hoyt C. A. King D. B. Noble J. F. Gibbons High-frequency Si/Si $_{1-x}$ Ge $_{x}$ heterojunction bipolar transistors IEDM Tech. Dig. 647 650 1989 794 2489 74363
- (1989) , pp. 647-650
- Kamins, T.I.¹ Nauka, K.² Camnitz, L.H.³ Kruger, J.B.⁴ Turner, J.E.⁵ Rosner, S.J.⁶ Scott, M.P.⁷ Hoyt, J.L.⁸ King, C.A.⁹ Noble, D.B.¹⁰ Gibbons, J.F.¹¹

8
- 85176670003
- Elsevier The Netherlands
- I. E. Getreu Modeling the Bipolar Transistor. 140 143 1978 Elsevier The Netherlands
- (1978) , pp. 140-143
- Getreu, I.E.¹

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