A semianalytical parameter-extraction procedure for HBT equivalent circuit

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 10 PART 1, 1998, Pages 1427-1435

  Li, Bin ^a,b   Prasad, Sheila ^a,d,e   Yang, Li Wu ^a,b,c,e   Wang, S C ^a,b,c,e  

^a IEEE   (United States)

^b Northeastern University   (United States)

^c Vitesse Semiconductor Corporation   (United States)

^d NORTHROP GRUMMAN CORPORATION   (United States)

^e BAE SYSTEMS   (United States)

Author keywords

Heterojunction bipolar transistor; Parameter extraction; Semianalytical method

Indexed keywords

EID: 0001495817     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.721144     Document Type: Article

References (9)

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