Reduction of the base-collector capacitance in InP/GalnAs heterojunction bipolar transistors due to electron velocity modulation

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 628-633

  Betser, Yoram ^a   Ritter, Dan ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b University of California   (United States)

Author keywords

Base collector capacitance; Heterojunction bipolar transistors; Indium gallium arsenide; Velocity overshoot

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

BASE COLLECTOR CAPACITANCE; DIELECTRIC CAPACITANCE; ELECTRON VELOCITY MODULATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032624230     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753693     Document Type: Article

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