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Volumn 45, Issue 1, 1997, Pages 39-45

A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; OPTIMIZATION; PARAMETER ESTIMATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

EID: 0030787660     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.552030     Document Type: Article
Times cited : (38)

References (13)
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    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 2018-2024
    • Costa, D.1    Liu, W.U.2    Harris, J.S.3    Jr4
  • 4
    • 0026983635 scopus 로고
    • Parameter-extraction method for heterojunction bipolar transistors
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    • S. A. Maas and D. Tait, Parameter-extraction method for heterojunction bipolar transistors IEEE Microwave Guided Wave Lett., vol. 2, pp. 502-504, Dec. 1992.
    • (1992) IEEE Microwave Guided Wave Lett. , vol.2 , pp. 502-504
    • Maas, S.A.1    Tait, D.2
  • 5
    • 84939361544 scopus 로고
    • Evaluation of the factors determining HBT high-frequency performance by direct analysis of 5-parameter data
    • Dec.
    • D. R. Pehlke and D. Pavlidis, Evaluation of the factors determining HBT high-frequency performance by direct analysis of 5-parameter data IEEE Trans. Microwave Theory Tech, vol. 40, pp. 2367-2373, Dec. 1992.
    • (1992) IEEE Trans. Microwave Theory Tech , vol.40 , pp. 2367-2373
    • Pehlke, D.R.1    Pavlidis, D.2
  • 6
    • 0029272049 scopus 로고
    • Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured 5-parameters
    • Mar.
    • U. Schaper and B. Holzapfl, Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured 5-parameters IEEE Trans. Microwave Theory Tech., vol. 43, pp. 49398, Mar. 1995.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , pp. 49398
    • Schaper, U.1    Holzapfl, B.2
  • 7
    • 0029378254 scopus 로고
    • Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
    • Sept.
    • C.-J. Wei and J. C. M. Hwang, Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2035-2040, Sept. 1995.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , pp. 2035-2040
    • Wei, C.-J.1    Hwang, J.C.M.2
  • 8
    • 33947325795 scopus 로고
    • Extraction of the InP/GalnAs heterojunction bipolar transistors smallsignal equivalent circuit
    • June
    • S. J. Spiegel, D. Ritter, R. A. Hamm, A. Feygenson, and P. R. Smith, Extraction of the InP/GalnAs heterojunction bipolar transistors smallsignal equivalent circuit IEEE Trans. Electron Devices, vol. 42, pp. 1059-1064, June 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1059-1064
    • Spiegel, S.J.1    Ritter, D.2    Hamm, R.A.3    Feygenson, A.4    Smith, P.R.5
  • 9
    • 0030109379 scopus 로고    scopus 로고
    • Reduction of base-collector capacitance by undercutting the collector and subcollector in GalnAs/InP DHBT's
    • Mar.
    • Y. Miyamoto, J. M. M. Rios, A. G. Dentai, and S. Chandrasekhar, Reduction of base-collector capacitance by undercutting the collector and subcollector in GalnAs/InP DHBT's IEEE Electron Device Lett., vol. 17, pp. 97-99, Mar. 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 97-99
    • Miyamoto, Y.1    Rios, J.M.M.2    Dentai, A.G.3    Chandrasekhar, S.4
  • 10
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    • Reconciliation of methods for estimating /max for microwave heterojunction transistors
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    • A. P. Laser and D. L. Pulfrey, Reconciliation of methods for estimating /max for microwave heterojunction transistors IEEE Trans. Electron Devices, vol. 38, pp. 1685-1692, Aug. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1685-1692
    • Laser, A.P.1    Pulfrey, D.L.2
  • 11
    • 0026171562 scopus 로고
    • A three-step method for the de-embedding of high-frequency 5-parameter measurements
    • June
    • H. Cho and D. E. Burk, A three-step method for the de-embedding of high-frequency 5-parameter measurements IEEE Trans. Electron Devices, vol. 38, pp. 1371-1375, June 1991.
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    • Cho, H.1    Burk, D.E.2
  • 12
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    • A simplified model for the distributed base contact impedance in heterojunction bipolar transistors
    • W. U. Liu, D. Costa, and J. S. Harris Jr., A simplified model for the distributed base contact impedance in heterojunction bipolar transistors Solid-State Electron., vol. 35, no. 4, pp. 547-552, 1992.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.