Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs

Electronics Letters

Volumn 34, Issue 10, 1998, Pages 1031-1033

  Ihn, B ^a   Lee, J ^b   Roh, T M ^c   Kim, Y S ^d   Kim, B ^d  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROMAGNETIC DISPERSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

SURFACE RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032074724     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980701     Document Type: Article

References (5)

1. HAYAMA, N., and HONJO, K.: 'Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer', IEEE Electron Device Lett., 1990, 11, pp. 388-390
2. LIU, W., and HARRIS, J.S.: 'Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors', IEEE Trans. Electron Devices, 1992, ED-39, pp. 2726-2732
3. LADBROOKE, P.H., and BLIGHT, S.R.: 'Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies', IEEE Trans. Electron Devices, 1988, ED-35, pp. 257-267
4. GOLIO, J.M., MILLER, M.C., MARACAS, G.N., and JOHNSON, D.A.: 'Frequency-dependent electrical characteristics of GaAs MESFET's', IEEE Trans. Electron Devices, 1990, ED-37, pp. 1217-1227
5. ASPNES, D.E.: 'Recombination at semiconductor surfaces and interfaces'. Surface Sci., 1983, 132, pp. 406-421