Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1081-1086

  Sotoodeh, Mohammad ^a   Khalid, A H ^a   Sheng, Hong ^a   Amin, Farid A ^a   Gokdemir, Tacar ^a   Rezazadeh, Ali A ^a   Knights, Andy P ^a   Button, Christopher C ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRAPS; ELECTRONS; EQUIVALENT CIRCUITS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

BASE COLLECTOR DESIGN; BASE TRANSIT TIME; COLLECTOR TRANSIT TIME; CUTOFF FREQUENCY; DELAY TIMES; SATURATION VELOCITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032652480     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766867     Document Type: Article

References (12)