Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 117-121

  Hemink, G J ^a   Shimizu, K ^a   Aritome, S ^a   Shirota, R ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; NAND CIRCUITS; OXIDES; PROM; STRESSES;

STRESS INDUCED TUNNEL OXIDE LEAKAGE CURRENT; WRITE/ERASE CYCLES;

SEMICONDUCTOR STORAGE;

EID: 0029721321     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1996.492070     Document Type: Conference Paper

References (9)