Thickness dependence of thin oxide wearout

Solid-State Electronics

Volumn 42, Issue 3, 1998, Pages 317-324

  Gladstone IV, S M ^a,b   Dumin, D J ^a  

^a AMRL   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; HOLE TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; SEMICONDUCTOR DEVICE MODELS; STRESSES;

HIGH VOLTAGE STRESSING; THIN OXIDE WEAROUT;

GATES (TRANSISTOR);

EID: 0032019458     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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