Turn-around" effects of stress-induced leakage current of ultrathin N 2O-annealed oxides

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 673-

  Lai, Kafai ^a   Chen, Wei Ming ^a   Hao, Ming Yin ^a   Lee, Jack ^b   Gardner, Mark ^b   Fulford, Jim ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Advance Micro Devices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747269879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115199     Document Type: Article

References (10)