Electrical properties of crystalline Ta2O5 with Ru electrode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2094-2097

  Kim, Jin Won ^a   Nam, Sang Don ^a   Lee, Seung Hwan ^a   Won, Seok Jun ^a   Kim, Wan Don ^a   Yoo, Cha Young ^a   Park, Young Wook ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Capacitor; Dielectric constant; DRAM; Leakage current; Ru; Ta2O5

Indexed keywords

ANNEALING; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHENIUM; TANTALUM COMPOUNDS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; TANTALUM PENTOXIDE;

CRYSTALLINE MATERIALS;

EID: 0033727208     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2094     Document Type: Article

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