Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering process

Integrated Ferroelectrics

Volumn 13, Issue 1-3, 1996, Pages 157-177

  Hwang, Cheol Seong ^a   Lee, Byoung Taek ^a   Park, Soon Oh ^a   Kim, Jin Won ^a   Cho, Hag Ju ^a   Kang, Chang Seok ^a   Horii, Hideki ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

(Ba,Sr)TiO3; Barrier height; Leakage current; Pt; Schottky conduction; Tunneling

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FERROELECTRIC DEVICES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION; PLATINUM; SPUTTER DEPOSITION; THICK FILMS; THIN FILMS; TITANIUM OXIDES;

BARRIER HEIGHT; SCHOTTKY CONDUCTION;

CAPACITORS;

EID: 0030350061     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589608013090     Document Type: Article

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