Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon

Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Volumn 183, Issue , 2000, Pages 41-52

  Knights, A P ^a   Coleman, P G ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF BATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON BEAMS; ION IMPLANTATION; SPECTROSCOPIC ANALYSIS;

POSITRON ANNIHILATION SPECTROSCOPY (PAS);

SEMICONDUCTING SILICON;

EID: 0033713879     PISSN: 10120386     EISSN: None     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.183-185.41     Document Type: Article

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