Interdiffusion behavior of Si/Si1-xGex layers in inert and oxidizing ambients

Materials Research Society Symposium - Proceedings

Volumn 532, Issue , 1998, Pages 119-124

  Griglione, Michelle ^a   Anderson, Tim ^a   Haddara, Yaser ^a   Law, Mark ^a   Jones, Kevin ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; COMPUTER SIMULATION; COMPUTER SOFTWARE; INTERDIFFUSION (SOLIDS); OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

FRACTIONAL INTERSTITIALS COMPONENT; SILICON GERMANIDE; SOFTWARE PACKAGE FLOOPS;

HETEROJUNCTIONS;

EID: 0031623116     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-532-119     Document Type: Conference Paper

References (10)