Prospects of Ga/In/Al-N nanometer devices: Electronic structure, scattering rates, and high field transport

Physica Status Solidi (B) Basic Research

Volumn 204, Issue 1, 1997, Pages 133-135

  Zandler, G ^a   Majewski, J A ^a   Stadele M ^a   Vogl, P ^a   Compagnone, F ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031522381     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199711)204:1<133::AID-PSSB133>3.0.CO;2-E     Document Type: Article

References (9)

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