The nature and origin of lateral composition modulations in short-period strained-layer superlattices

Materials Research Society Symposium - Proceedings

Volumn 583, Issue , 2000, Pages 297-313

  Norman, A G ^a   Ahrenkiel, S P ^a   Moutinho, H R ^a   Ballif, C ^a   Aljassim, M M ^a   Mascarenhas, A ^a   Follstaedt, D M ^b   Lee, S R ^b   Reno, J L ^b   Jones, E D ^b   Mirecki Millunchick, J ^b,d   Twesten, R D ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GLOBAL COMPRESSION; GLOBAL TENSION; MOLE FRACTION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033679438     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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