Surface spinodal decomposition in low temperature Al 0.48 In 0.52 As grown on InP(001) by molecular beam epitaxy

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 324-328

  Grenet, G ^a   Gendry, M ^a   Oustric, M ^a   Robach, Y ^a   Porte, L ^a   Hollinger, G ^a   Marty, O ^b   Pitaval, M ^b   Priester, C ^c  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DECOMPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM INDIUM ARSENIDE; BEAM EQUIVALENT PRESSURE; SPINODAL DECOMPOSITION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031706922     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00522-9     Document Type: Article

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