Electro-thermal modelling of monolithic and hybrid microwave and millimeter wave IC's

VLSI Design

Volumn 10, Issue 4, 2000, Pages 355-389

  Batty, W ^a,c,d,e,f   Panks, A J ^a   Johnson, R G ^a,g,h   Snowden, C M ^a,b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b Filtronic Plc   (United Kingdom)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d UNIVERSITY OF SURREY   (United Kingdom)

^e UNIVERSITY OF YORK   (United Kingdom)

^f BANGOR UNIVERSITY   (United Kingdom)

^g UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^h UNIVERSITY OF BATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER AIDED NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; HIGH ELECTRON MOBILITY TRANSISTORS; HYBRID INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; ITERATIVE METHODS; MATRIX ALGEBRA; MESFET DEVICES; MILLIMETER WAVE DEVICES; SEMICONDUCTOR DEVICE MODELS;

ELECTRO-THERMAL MODELS; LEEDS PHYSICAL MODEL; THERMAL RESISTANCE MATRICES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033671089     PISSN: 1065514X     EISSN: None     Source Type: None    
DOI: 10.1155/2000/86517     Document Type: Article

References (61)

1. Bonani, F., Ghione, G., Pirola, M. and Naldi, C. U. (1994). "A large-scale, self-consistent thermal simulator for the layout optimization of power III-V field-effect and bipolar transistors", IEEE GaAs '94, Proc. European Gallium Arsenide and Related III-V Compounds Applications Symp., pp. 411-414.
2. Bonani, F., Ghione, G., Pirola, M. and Naldi, C. U. (1994). "Large-scale, computer-aided thermal design of power GaAs integrated devices and circuits", Proc. IEEE GaAs IC Symposium, pp. 141-144.
3. Bonani, F., Ghione, G., Pirola, M. and Naldi, C. U. (1995). "Thermal CAD for power III-V devices and MMICs", Proc. SBMO/IEEE MTT-S Internat. Microwave and Optoelectronics Conf., 1, 352-357.
4. Webb, P. W. and Russell, I. A. D. (1989). "Thermal resistance of gallium-arsenide field-effect transistors", IEE Proc., 136, Pt. G, No. 5, 229-234.
5. Webb, P. W. and Russell, I. A. D. (1991). "Thermal simulation of transients in microwave devices", IEE Proc., 138, Pt. G, No. 3, 329-334.
6. Gui, X., Webb, P. W. and Gao, G.-B. (1992). "Use of the three-dimensional TLM method in the thermal simulation and design of semiconductor devices", Trans. Electron Dev., 39(6), 1295-1302.
7. Webb, P. W. (1993). "Thermal modeling of power gallium arsenide microwave integrated circuits", IEEE Trans. Electron Dev., 40(5), 867-877.
8. Webb, P. W. (1997). "Thermal design of gallium arsenide MESFETs for microwave power amplifiers", IEE Proc. Circuits Devices Syst., 144(1), 45-50.
9. Dorkel, J.-M., Tounsi, P. and Leturcq, P. (1996). "Three-dimensional thermal modeling based on the two-port network theory for hybrid or monolithic integrated power circuits", IEEE Trans. Components, Packaging and Manufacturing Technology-Part A, 19(4), 501-507.
10. Ellison, G. N. (1996). "Thermal analysis of circuit boards and microelectronic components using an analytical solution to the heat conduction equation", Proc. 12th Annual IEEE Semiconductor Thermal Measurement and Management Symp., pp. 144-150.
11. Ellison, G. N. (1995). "Thermal analysis of microelectric packages and printed circuit boards using an analytic solution to the heat conduction equation", Advances in Engineering Software, 22(2), 99-111.
12. Anholt, R., Electrical and thermal characterization of MESFETs, HEMTs, and HBTs, Boston: Artech House, 1994.
13. Anholt, R. (1998). "HBT thermal element design using an electro/thermal simulator", Solid-State Electronics, 42(5), 857-864.
14. Anholt, R. (1998). "Thermal impedances of multi-finger heterojunction bipolar transistors", Solid-State Electronics, 42(5), 865-869.
15. Anholt, R. (1998). "FET and HEMT thermal impedances", Solid-State Electronics, 42(5), 849-855.
16. Ghione, G. and Naldi, C. U. (1989). "A self-consistent thermal simulator of MMIC multi-gate GaAs active devices", ESPRIT'89, Proc. 6th Annual ESPRIT Conf. (EUR 12512), Brussels, Belgium, pp. 73-88.
17. Snowden, C. M. (1997). "Large-signal microwave characterization of AIGaAs/GaAs HBT's based on a physics-based electrothermal model", IEEE Trans. Micro. Theory and Tech., 45(1), 58-71.
18. Batty, W., Panks, A. J. and Snowden, C. M. (1999). "Fully coupled electro-thermal simulation of MMICs and MMIC arrays based on a physical model", IEEE MTT-S Internat. Microwave Symp. Dig., 2, Paper TU4C-5, 693-696.
19. Batty, W., Panks, A. J., Johnson, R. G. and Snowden, C. M. (1999). "Electro-thermal modelling and measurement for spatial power combining at millimeter wavelengths", IEEE Trans. Microwave Theory Techniques, 47(12), 2574-2585.
20. Cheng, Y.-K., Teng, C.-C., Dharchoudhury, A., Rosenbaum, E. and Kang, S.-M., "A chip-level electrothermal simulator for temperature profile estimation of CMOS VLSI chips", Proc. IEEE Int. Symp. Circuits and Systems, 4, 580-583, Atlanta, 1996.
21. Curtice, W. R. and Yun, Y.-H. (1981). "A temperature model for the GaAs MESFET", IEEE Trans. Electron Dev., ED-28(8), 954-962.
22. Johnson, R. G., Snowden, C. M. and Pollard, R. D. (1997). "A physics-based electro-thermal model for microwave and millimetre wave HEMTs", IEEE MTT-S Internat. Microwave Symp. Dig., 3, Paper TH3E-6, 1485-1488.
23. Albasha, L., Johnson, R. G., Snowden, C. M. and Pollard, R. D., "An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model", Proc. IEEE 24th Internat. Symp. Compound Semiconductors, pp. 471-474, San Diego, 1997.
24. Batty, W., Panks, A. J., Johnson, R. G., and Snowden, C. M. "Electro-thermal physical modelling and measurement of MMICs and MMIC grid arrays with thermal transients due to turn-on and pulsed operation", IEEE Trans. Microwave Theory Techniques, to be submitted.
25. Baureis, P., "Electrothermal modeling of multi-emitterheterojunction bipolar transistors (HBT's)", Proc. INMMC-94, pp. 145-148, Duisburg, Germany, 1994.
26. Liou, L. L., Ebel, J. L. and Huang, C. I. (1993). "Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation", Trans. Electron Der., 40(1), 35-43.
27. Joy, R. C. and Schlig, E. S. (1970). "Thermal properties of very fast transistors", IEEE Trans. Electron Dev., ED-17(8), 586-594.
28. Kokkas, A. G. (1974). "Thermal analysis of multiple-layer structures", IEEE Trans. Electron Dev., ED-21(11), 674-681.
29. Leturcq, P., Dorkel, J.-M., Napieralski, A. and Lachiver, E. (1987). "A new approach to thermal analysis of power devices", IEEE Trans. Electron Dev., ED-34(5), 1147-1156.
30. Wachutka, G. (1989). "An extended thermodynamic model for the simultaneous simulation of the thermal and electrical behaviour of semiconductor devices", Proc. 6th Internat. NASECODE Conf., pp. 409-414.
31. Gao, G.-B., Wang, M.-Z., Gui, X. and Morkoc, H. (1989). "Thermal design studies of high-power heterojunction bipolar transistors", IEEE Trans. Electron Dev., 36(5), 854-863.
32. Fan, M. S., Christou, A. and Pecht, M. G. (1992). "Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMIC's)", IEEE Trans. Electron Dev., 39(5), 1075-1079.
33. Higgins, J. A. (1993). "Thermal properties of power HBT's", IEEE Trans. Electron Dev., 40(12), 2171-2177.
34. Liou, L. L. and Bayraktaroglu, B. (1994). "Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers", IEEE Trans. Electron Dev., 41(5), 629-636.
35. Ishizuka, M., Hisano, K., Sasaki, T. and Fukuoka, Y., "Application of the thermal network method to the transient thermal analysis of multichip modules", Proc. Japan Int. Symp. Electronic Manufacturing Technology, Paper WC1-4, pp. 464-467, Omiya, 1995.
36. Lai, J. and Majumdar, A. (1996). "Concurrent thermal and electrical modeling of sub-micrometer silicon devices", J. Appl. Phys., 79(9), 7357-7361.
37. Lu, K. and Snowden, C. M. (1996). "Analysis of thermal instability in multi-finger power AlGaAs/GaAs HBT's", IEEE Trans. Electron Dev., ED-43(11), 1799-1805.
38. Digele, G., Lindenkreuz, S. and Kasper, E. (1997). "Fully coupled dynamic electro-thermal simulation", IEEE Trans. Very Large Scale Integration (VLSI) Systems, 5(3), 250-257.
39. Digele, G., Lindenkreuz, S. and Kasper, E., "Electrothermal interaction on circuit level under the influence of packaging", Proc. 27th European Conf. Solid-State Device Research, pp. 460-463, Stuttgart, 1997.
40. Snowden, C. M., "Characterization and modelling of microwave and millimeter-wave large-signal device-circuit interaction based on electro-thermal physical models", IEEE MTT-S Internat. Microwave Symp. Dig., 1, Paper TU3B-2, 155-158, Colorado, 1997.
41. Breglio, G., Pica, S. and Spirito, P., "Thermal effects and electro-thermal modeling in power bipolar transistors", Proc. 21st Internat. Conf. Microelectronics (MIEL'97), 1, 383-390, Yugoslavia, 1997.
42. Batty, W., Johnson, R. G. and Snowden, C. M., "Electrothermal HEMT modelling for microwave and millimeter wave Circuit Design", Proc. IOP Condensed Matter and Materials Physics Conference, Paper SSb.P2.15, p. 133, Exeter, 1997.
43. Morton, C. G. and Snowden, C. M., "MESFET and HEMT design using fast physical device simulation", Microwave Journal, pp. 94-113, September, 1998.
44. Souverain, P., Camps, T., Faleh, M. S., Cazarre, A., Tasselli, J., Marty, A. and Bailbe, J. P. (1998). "Three-dimensional modelling of the heat flow into a GaAs substrate. Influence of thermal phenomena on the RF behaviour of power HBTs and technological optimization", Microelectron. Reliab., 38(4), 553-557.
45. Szekely, V., Rencz, M. and Courtois, B., "Tracing the thermal behaviour of ICs", IEEE Design Test Computers, pp. 14-21, April-June, 1998.
46. Snowden, C. M., "Electrothermal transistor models for large-signal design", IEEE MTT-S Workshop Digest on 'New developments in time domain methods for non-linear design', pp. 1-16, June, 1998.
47. Snowden, C. M., "Electro-thermal microwave transistor models for large-signal CAD", Proc. Integrated Nonlinear Microwave and Millimeterwave Circuits Conf., pp. 56-68, Duisburg, October, 1998.
48. Snowden, C. M., "Non-linear microwave CAD using physics-based active device models", Proc. Asia Pacific Microwave Conf., pp. 1417-1424, Yokahama, Japan, 1998.
49. Snowden, C. M. and Pantoja, R. R. (1989). "Quasi-two-dimensional MESFET simulations for CAD", IEEE Trans. Electron Dev., 36(9), Pt. 1, 1564-1574.
50. Morton, C. G., Atherton, J. S., Snowden, C. M., Pollard, R. D. and Howes, M. J. (1996). "A large-signal physical HEMT model", IEEE MTT-S Internat. Microwave Symp. Dig., pp. 1759-1762.
51. Morton, C. G. and Snowden, C. M. (1998). "Comparison of quasi-2D and ensemble Monte Carlo simulations for deep submicron HEMTs", IEEE MTT-S Internat. Microware Symp. Dig., 1, 153-156.
52. Blakemore, J. S. (1982). "Semiconducting and other major properties of gallium arsenide", J. Appl. Phys., 53, R123-186.
53. Panks, A. J. (1997). "The synthesis of two-terminal negative conductances based on physical modelling", Ph.D. Thesis, University of Leeds.
54. York, R. A. and Popović, Z. B. Eds., Active and quasi-optical arrays for solid-state power combining, Wiley (1997).
55. Joyce, W. B. (1975). "Thermal resistance of heat sinks with temperature-dependent conductivity", Solid-State Electronics, 18, 321-322.
56. Maycock, P. D. (1967). "Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys", Solid-State Electronics, 10, 161-168.
57. Bonani, F. and Ghione, G. (1995). "On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal conductivity", Solid-State Electronics, 38(7), 1409-1412.
58. Brewster, R. A. and Sherif, R. A. (1992). "Thermal analysis of a substrate with power dissipation in the vias", IEEE Trans. Components, Hybrids, Manufacturing Technology, 15(5), 667-674.
59. Goldberg, J. L. (1972). Systems of Ordinary Differential Equations.
60. Liu, Y., Phan-Thien, N., Kemp, R. and Luo, X.-L. (1997). "Three-dimensional coupled conduction-convection problem for three chips mounted on a substrate in an enclosure", Numerical Heat Transfer, Part A, 32, 149-167.
61. Lee, S. and Yovanovich, M. M. (1992). "Linearization of natural convection from a vertical plate with arbitrary heat-flux distributions", Trans. ASME Journal of Heat Transfer, 114, 909-916.