An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 471-474

  Albasha, L ^a   Johnson, R G ^a   Snowden, C M ^a   Pollard, R D ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MESFET DEVICES; POWER HEMT;

BREAKDOWN PROCESS; CHANNEL TEMPERATURE; EXPERIMENTAL VALIDATIONS; GATE METALLIZATION; PHYSICAL INTERPRETATION; PHYSICAL SIMULATION; SUBSTRATE CONDUCTION; TEMPERATURE DEPENDENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84897495798     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711717     Document Type: Conference Paper

References (6)

1. J. Ashworth, The physical mechanisms covering breakdown in GaAsMESFETs, Ph. D thesis, Leeds University, UK, 1993
2. C. G. Morton, J. S. Atherton, CM. Snowden, R. D. Pollard, M, J. Howes, "A large-signal physical HEMT model, "Int. Microwave Symp. MTT-S, Vol. 3, pp. 1759-1762, San Francisco, June 1996
3. F. A. Padovani, R. Stratton, "Field and thermionic-field emission in schottky bamas, "Solid-State Electronics, Vol. 9, pp. 695-707, 1966
4. CM. Snowden, R. R. Pantoja, "Quasi-two-dimensional MESFET simulation for CAD, "IEEE Trans., ED-36, No 9, pp. 1564-1574, 1989
5. R. G. Johnson, CM. Snowden, R. D. Pollard, "A physics based electro-thermal model microwave and mm-wave HEMTs. 'Tnternational Microwave Symposium, MTT-S, Vol. 3, pp. 1485-1488, Denver, USA, June 1997.
6. J. C. A. D, Santos, Modelling ofshort-gate length MESFETs for power amplifiers, Ph. D thesis, Leeds University, UK, 1991