Analysis of thermal instability in multi-finger power AlGaAs/GaAs HBT's

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1799-1805

  Lu, Ke ^a   Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY; THERMOELECTRICITY;

CURRENT GAIN COLLAPSE; MULTIFINGER HIGH POWER DEVICES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030290903     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543010     Document Type: Article

References (26)

1. L. L. Liou B. Bayraktaroglu C. I. Huang Thermal stability analysis of multiple emitter finger microwave AlGaAs/GaAs heterojunction bipolar transistors Dig. MTT-S 281 284 1993 694 6842 276823
2. R. Anholt Electrical and Thermal Characterization of MESFET's, HEMT's, and HBT's 1995 Artech House MA, Norwood
3. R. M. Scarlett W. Shockley Second breakdown and hot spots in power transistors Proc. 1963 IEEE Int. Conv. Rec. 3 13
4. O. Muller J. Pest Thermal feedback in power semiconductor devices IEEE Trans. Electron Devices ED-17 770 782 Sept. 1970
5. L. L. Liou B. Bayraktaroglu C. I. Huang Theoretical thermal runaway analysis of heterojunction bipolar transistors: Junction temperature rise threshold Solid-State Electron. 39 1 165 172 1996
6. K. Lu C. M. Snowden R. D. Pollard Analysis of collapse pattern in multi-finger power AlGaAs/GaAs HBT's European GaAs and Related III̵V Compounds Application Symp. 5’ June 1996 Paris paper no. 2C5
7. C. M. Snowden Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electro-thermal model
8. A. Khatibzadeh W. Liu T. Henderson J. Sweder S. Pierce High-efficiency X-band HBT power amplifier Proc. IEEE Monolithic Circuits Symp. 117 120 1994 CA, San Diego 1082 7847 332130
9. J. A. Higgins Thermal properties of power HBT's IEEE Trans. Electron Devices 40 2171 2177 Dec. 1993 16 6384 249461
10. D. Dawson Thermal aspects of microwave device and circuit CAD Proc. of the Workshop, MTT-Symp. 1993 GA, Atlanta
11. P. W. Webb I. A. D. Russell Thermal simulation of transients in microwave devices IEE Proceeding-G 138 329 334 June 1991 2211 6544 258022
12. H. Wang C. Algani A. Konczykowska W. Zuberek Temperature dependence of DC currents in HBT Dig. of MTT-S 731 734 1992 646 4776 188089
13. K. Lu P. A. Perry T. J. Brazil A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter-extraction procedure IEEE Trans. Microwave Theory Tech. 43 1433 1445 July 1995 22 8938 392900
14. L. L. Liou J. L. Ebel C. I. Huang Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation IEEE Trans. Electron Devices 40 35 43 Jan. 1993 16 6383 249421
15. A. Marty T. Camps J. Tasselli D. L. Pulfrey J. P. Bailbe A self-consistent DC-AC two-dimensional electrothermal model for GaAlAs/GaAs microwave power HBT's IEEE Trans. Electron Devices 40 1202 1210 July 1993 16 5658 216422
16. W. Liu A. Khatibzadeh The collapse of current gain in multi-finger heterojunction bipolar transistors: Its substrate temperature dependence, instability criteria, and modeling IEEE Trans. Electron Devices 41 1698 1707 Oct. 1994 16 7728 324577
17. W. Liu Thermal coupling in two-finger heterojunction bipolar transistors IEEE Trans. Electron Devices 42 1033 1038 June 1995 16 8777 387234
18. R. H. Winkler Thermal properties of high-power transistors IEEE Trans. Electron Devices ED-14 260 263 May 1967
19. F. Bergmann D. Gerstner Some new aspects of thermal instability of the current distribution in power transistors IEEE Trans. Electron Devices ED-13 630 634 Aug./Sept. 1966
20. R. Gilmore Catastrophe Theory for Scientists and Engineers. 1981 Wiley New York
21. F. Ali A. Gupta 1991 Artech House MA, Norwood
22. G. B. Gao M. Z. Wang X. Gui H. Morkoc Thermal design studies of high-power heterojunction bipolar transistors IEEE Trans. Electron Devices 36 854 863 May 1989 16 7416 299666
23. P. Lecturcq J. Dorkel A. Napieralski E. Lachiver A new approach to thermal analysis of power devices IEEE Trans. Electron Devices ED-34 1147 1156 May 1987
24. P. C. Grossman J. Choma Jr. Large-signal modeling of HBT's including self-heating and transit time effects IEEE Trans. Microwave Theory Tech. 40 449 464 Apr. 1992 22 3466 121720
25. C. M. Snowden HBTSIM: Heterojunction bipolar transistor simulator 1993 Univ. of Leeds
26. W. Liu S. Nelson D. G. Hill A. Khatibzadeh Current gain collapse in microwave multi-finger heterojunction bipolar transistors operated at very high-power densities IEEE Trans. Electron Devices 40 1917 1926 Nov. 1993 16 6162 239729