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Volumn 41, Issue 9, 1998, Pages 94-113

MESFET and HEMT design using fast physical device simulation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES;

EID: 0032162734     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (9)
  • 3
    • 0018879033 scopus 로고
    • Modeling of a Submicrometer Gate Field-effect Transistor including Effects of Nonstationary Electron Dynamics
    • January
    • B. Carnez, A. Cappy, A. Kaszynski, E. Constant and G. Salmer, "Modeling of a Submicrometer Gate Field-effect Transistor including Effects of Nonstationary Electron Dynamics," Journal of Applied Physics, Vol. 51, No. 1, January 1980, pp. 784-790.
    • (1980) Journal of Applied Physics , vol.51 , Issue.1 , pp. 784-790
    • Carnez, B.1    Cappy, A.2    Kaszynski, A.3    Constant, E.4    Salmer, G.5
  • 4
    • 0024737719 scopus 로고
    • Quasi-two-dimensional MEWFET Simulations for CAD
    • September
    • C.M. Snowden and R. R. Pantoja, "Quasi-two-dimensional MEWFET Simulations for CAD," IEEE Transactions on Electronic Devices, Vol. 36, No. 9, September 1989, pp. 1564-1574.
    • (1989) IEEE Transactions on Electronic Devices , vol.36 , Issue.9 , pp. 1564-1574
    • Snowden, C.M.1    Pantoja, R.R.2
  • 5
    • 0023294219 scopus 로고
    • Two-dimensional Hot-electron Models or Short-gate-length GaAs MESFETs
    • February
    • C.M. Snowden and D. Loret, "Two-dimensional Hot-electron Models or Short-gate-length GaAs MESFETs," IEEE Transactions on Electronic Devices, Vol. ED-34, No. 2, February 1987, pp. 212-223.
    • (1987) IEEE Transactions on Electronic Devices , vol.ED-34 , Issue.2 , pp. 212-223
    • Snowden, C.M.1    Loret, D.2
  • 6
    • 0004457553 scopus 로고
    • Electron Energy Levels in GaAs-AlGaAs Heterostructures
    • July
    • F. Stern and S.D. Sarma, "Electron Energy Levels in GaAs-AlGaAs Heterostructures," Phys. Rev. B., Vol. 30, July 1984, pp. 840-848.
    • (1984) Phys. Rev. B. , vol.30 , pp. 840-848
    • Stern, F.1    Sarma, S.D.2
  • 8
    • 0006339453 scopus 로고
    • Theoretical and Experimental Capacitance-voltage Behavior of AlGaAs/GaAs Modulation-doped Heterojunctions: Relation of Conduction-band Discontinuity to Donor Energy
    • G.B. Norris, D.C. Look, W. Kopp, J. Klem and H. Morkoc, "Theoretical and Experimental Capacitance-voltage Behavior of AlGaAs/GaAs Modulation-doped Heterojunctions: Relation of Conduction-band Discontinuity to Donor Energy," Applied Physics Letters, Vol. 47, No. 4, 1985, pp. 423-425.
    • (1985) Applied Physics Letters , vol.47 , Issue.4 , pp. 423-425
    • Norris, G.B.1    Look, D.C.2    Kopp, W.3    Klem, J.4    Morkoc, H.5
  • 9
    • 0029701399 scopus 로고    scopus 로고
    • The Implementation of Calibration on Coplanar Waveguide for On-wafer Measurements at W-band
    • H. Leroux, J. Belquin, R.D. Pollard, C.M. Snowden and Michael J. Howes, "The Implementation of Calibration on Coplanar Waveguide for On-wafer Measurements at W-band," Proceedings of MTT-S, 1996, pp. 1395-1398.
    • (1996) Proceedings of MTT-S , pp. 1395-1398
    • Leroux, H.1    Belquin, J.2    Pollard, R.D.3    Snowden, C.M.4    Howes, M.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.