Thermal design of gallium arsenide MESFETs for microwave power amplifiers

IEE Proceedings: Circuits, Devices and Systems

Volumn 144, Issue 1, 1997, Pages 45-50

  Webb, P W ^a  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

AlESFETs; Surface mount power amplifiers

Indexed keywords

ALUMINA; DIAMONDS; DIELECTRIC MATERIALS; EFFICIENCY; FLIP CHIP DEVICES; MICROWAVE AMPLIFIERS; NITRIDES; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE MOUNT TECHNOLOGY;

ALUMINIUM OXIDE; MICROWAVE POWER AMPLIFIERS; THERMAL ATTACHMENT; THERMAL DESIGN;

MESFET DEVICES;

EID: 0031071939     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19970872     Document Type: Article

References (4)

1. WALKER, J.L.B.: 'High power GaAs FET amplifiers' (Artech House, 1993)
2. GILLICK, M., ROBERTSON, I.D., and JOSHI, J.S.: 'Coplanar waveguide two-stage balanced MMIC amplifier using impedancetransforming lumped-distributed branchline couplers', IEE Proc..- Microwaves, Antennas Propag., 1994, 141, (4), pp. 241245
3. WALLACE, P., WOHLERT, A., and IMMORLICA, A.A.: 'Flip-chip FETs on BeO: a new miniature hybrid technology'. Proceedings of the Microwave applications technology conference, Washington, DC, 1983, pp. 55-56,
4. BRICE, J.C.: 'Properties of Gallium Arsenide' (EMIS Datarev. Ser. INSPEC, London, 1986, No. 2)