FET and HEMT thermal impedances

Solid-State Electronics

Volumn 42, Issue 5, 1998, Pages 849-855

  Anholt, R ^a  

^a Gateway Modeling Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; THERMAL EFFECTS;

THERMAL IMPEDANCES;

FIELD EFFECT TRANSISTORS;

EID: 0032064920     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00092-6     Document Type: Article

References (11)

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2. Ghione, G., Golzio, P. and Naldi, C.U., Alta Freq., 1988, LVII(7), p. 311-319.
3. Bonani, F. and Ghione, G., Solid State Electron., 1995, 38, 1409-1412.
4. Anholt, R. et al., 1996 IEEE GaAs IC Symp., p. 167.
5. Smith, D.H., 1991 IEEE GaAs IC Symp., p. 187-190.
6. Donzelli, P., Ghione, G. and Naldi, C. U., GaAs Applications Symp. Conf. Proc., April 1990, pp. 120-127.
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10. Albers, J., TXYZ Program for Semiconductor IC Thermal Analysis, NBS Pub. 400-76, April, 1984.
11. Dawson, D., 1994 IEEE GaAs IC Symp., pp. 285-291.