Large-signal microwave characterization of algaas/gaas hbt's based on a physics-based electrothermal model

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 1, 1997, Pages 58-71

  Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; MICROWAVE AMPLIFIERS; NONLINEAR CONTROL SYSTEMS; NONLINEAR EQUATIONS; ROBUSTNESS (CONTROL SYSTEMS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

MULTIFINGER ELECTROTHERMAL MODEL; NEWTON ALGORITHM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030734195     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.552033     Document Type: Article

References (26)

1. M. Salib, F. Au, A. Gupta and D. Dawson, A 1 watt, 8-14 GHz HBT amplifier with >45% peak power added efficiency IEEE Microwave Guided Wave Lett., vol. 2, pp. 44748, Nov. 1992.
2. H. Wang, K.-W. Chang, D. C.-W. Lo, L. T. Tran, J. C. Cowles, T. R. Block, G. S. Dow, A. Oki, D. C. Streit, and B. R. Allen, A 62 GHz monolithic InP-based HBT VCO IEEE Microwave Guided Wave Lett., vol. 5, pp. 388-390, Nov. 1995.
3. Y. I. Ryu, K. W. Kobayashi, and A. K. Oki, A monolithic broadband doubly balanced EHF HBT star mixer with novel microstrip baluns in Proc. IEEEMTT-S, Orlando, FL, May 1995, pp. 119-122.
4. D. J. Holder, Characterization and modeling of heterostructure bipolar junction transistors Ph.D. dissertation, University of Leeds, U.K., 1991.
5. L. L. Liou, J. L. Ebel, and C. I. Huang, Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two dimensional numerical simulation IEEE Trans. Electron Devices, 40, pp. 353, Jan. 1993.
6. S. A. Maas, B. L. Nelson, and D. L. Tait, Intermodulation in heterojunction bipolar transistors IEEE Trans. Microwave Theory Tech., vol. 40, pp. 442447, Mar. 1992.
7. M. Y. Frankel and D. Pavlidis, An analysis of the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors IEEE Trans. Microwave Theory Tech., vol. 40, pp. 465174, Mar. 1992.
8. K. Lu, P. A. Perry, T. J. Brazil, A new large-signal AlGaAs/GaAs HBT model including self-heating effects with corresponding parameter extraction procedure IEEE Trans. Microwave Theory Tech., vol. 43, pp. 1433-1445, July 1995
9. D.-W. Wu, M. Fukuda, and Y.-H. Yun, A novel extraction method for accurate determination of HBT large-signal model parameters in Proc. IEEE-MTT-S, Orlando, FL, 1995, pp. 1235-1238.
10. P. C. Grossman and J. Chôma, Jr., Large-signal modeling of HBT's Including self-heating and transit time effects IEEE Trans. Microwave Theory Tech., vol. 40, pp. 44964, Mar. 1992.
11. D. A. Teeter, J. R. East, R. K. Mains, and G. I. Haddad, Large-signal numerical and analytical HBT models IEEE Trans. Electron Devices, vol. 40, pp. 837-845, May 1993.
12. M. E. Hafizi, C. R. Crowell, and M. Grupen, The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling IEEE Trans. Electron Devices, vol. 37, pp. 2121-2129, Oct. 1990.
13. G. Stringfellow, Effect of surface treatment on recombination velocity and diode leakage current in GaP J. Vac. Sci. Tech., vol. 13, no. 4, pp. 908-913, 1978.
14. C. Sandroff, R. Nottenburg, J. Bischoff, and R. Bhat, Dramatic enhancement in the gain of GaAs/AlGaAs heterostructure bipolar transistors by surface chemical passivation Appl. Phys. Lett., vol. 51, no. 1, pp. 33-35, July 6, 1987.
15. J. J. X. Feng, D. L. Pulfrey, J. Sitch, and R. Surridge, A physics-based HBT SPICE model for large-signal applications IEEE Trans. Electron Devices, vol. 42, pp. 8-14, Jan. 1995.
16. D. K. Schröder, Semiconductor Material and Device Characterization. New York: Wiley, 1990.
17. W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling, Numerical Recipes-The Art of Scientific Computing. Cambridge, U.K.: Cambridge Univ. Press, 1988.
18. P. C. Grossman and A. Oki, A large-signal DC model for GaAs/Gai-zAlzAs heterojunction bipolar transistors in Bipolar Circuits and Technology Meet., Sept. 1989, pp. 258-262.
19. S. Tiwari, HBT device physics in Proc. IEEE GaAs 1C Symp. Short Course on HBT-IC Technology and Applications, 1992.
20. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967.
21. P. Antognettic and G. Massobrio, Eds., Semiconductor Device Modeling with SPICE. New York: McGraw-Hill, 1988.
22. L. L. Liou, J. L. Ebel, and C. I. Huang, Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation IEEE Trans. Electron Devices, vol. 40, pp. 352, Jan. 1993.
23. L. L. Liou and B. Bayraktaroglu, Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers IEEE Trans. Electron Devices, vol. 41, pp. 629-635, May 1994.
24. P. Baureis, Electrothermal modeling of multi-emitter heterojunctionbipolar transistors (HBT's) in Proc. INMMC-94, Duisburg, Germany, Oct. 1994, pp. 145-148.
25. G.-B. Gao, M.-Z. Whang, X Gui, and H. Morko, Thermal design studies of high-power heterojunction bipolar transistors IEEE Trans. Electron Devices, vol. 36, pp. 854-863, May 1989.
26. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Vienna, Austria: Springer-Verlag, 1984.