Electro-Thermal interaction on circuit level under the influence of packaging

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 460-463

  Digele, G ^a,b   Lindenkreuz, S ^a   Kasper, E ^b  

^a ROBERT BOSCH GMBH   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NONLINEAR EQUATIONS; SILICON;

CIRCUIT LEVELS; CRITICAL COMPONENT; FULLY-COUPLED; NONLINEAR HEAT DIFFUSION EQUATIONS; POWER APPLICATIONS; SELF-HEATING; TEMPERATURE DEPENDENT;

THERMAL CONDUCTIVITY;

EID: 1642619207     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194465     Document Type: Conference Paper

References (6)

1. G. Digele, S. Lindenkreuz, and E. Kasper, "Fully-coupled dynamic electro-thermal simulation," submitted for publication to IEEE Transactions on Very Large Scale Intergration (VLSI) Systems, 1997.
2. C. J. Glasbrenner and G. A. Slack, "Thermal conductivity of silicon and germanium from 3 if to the melting point," Physical Review 134, no-4 A, pp. 1058-1069, 1964.
3. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Springer-Verlag Wien New York, 1984.
4. SGS-Thomson, "Thermal management in surface mount technology," tech. rep., SGS-Thomson, Bretonis-cher Ring 4, 8011 Grasbrunn, Munich, July 1988.
5. V. Szekely and T. van Bien, "Fine structure of heat flow path in semiconductor devices: A measurement and identification method," Solid State Electronics, vol. 31, pp. 1363-1368, Feb. 1988.
6. G. Digele, S. Lindenkreuz, and E. Kasper, "Fully-coupled dynamic electro-thermal simulation," in Ther-minic-International Workshop on Thermal Investigations of ICs and Micro structures (IEEE), (Budapest, Hungary), pp. 73-77, Sept. 1996.