Three-dimensional modeling of the heat flow into a GaAs substrate. Influence of thermal phenomena on the RF behavior of power HBTs and technological optimization

Microelectronics Reliability

Volumn 38, Issue 4, 1998, Pages 553-557

  Souverain, P ^a   Camps, T ^a   Faleh, M S ^a   Cazarre A ^a   Tasselli, J ^a   Marty, A ^a   Bailbe J P ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT LOSSES; HEAT RESISTANCE; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

HETEROASSEMBLY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032044739     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00006-7     Document Type: Article

References (11)

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