Minority electron mobility in a p-n GaN photodetector

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 51-54

  Guan, Z P ^a,c   Li, J Z ^a   Zhang, G Y ^b   Jin, S X ^b   Ding, X M ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b PEKING UNIVERSITY   (China)

^c MISSOURI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIFFUSION IN SOLIDS; ELECTRIC POTENTIAL; PHONONS; PHOTOCONDUCTIVITY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING GALLIUM COMPOUNDS;

MINORITY CARRIERS;

ULTRAVIOLET DETECTORS;

EID: 0033639642     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/309     Document Type: Article

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