Effects of electron mass anisotropy on Hall factors in 6H-SiC

Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1341-1343

  Chen, G D ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000417548     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115928     Document Type: Article

References (12)

1. Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman (Institute of Physics, Bristol, 1993).
2. P. Staikov, D. Baum, J. Y. Lin, and H. X. Jiang, Solid State Commun. 89, 995 (1994).
3. W. M. Bullis and W. E. Krag, Phys. Rev. 101, 580 (1956).
4. W. M. Bullis, Phys. Rev. 109, 292 (1958).
5. A. C. Beer, Solid State Physics, Suppl. 4 (Academic, New York, 1963).
6. The exact formula for the magnetic field dependence of the Hall factor for 6H-SiC is unknown at this stage due to its complicated structure. Equation (3) is for Ge and Si under configurations such that B is in a 〈100〉 direction and j is perpendicular to B.
7. N. T. Son, O. Kordina, A. O. Konstantinov, W. M. Chen, E. Sorman, B. Monemar, and E. Janzen, Appl. Phys. Lett. 65, 3209 (1994).
8. W. R. L. Lambrecht and B. Seagall, Bull. Am. Phys. Soc. 40, 220 (1995).
9. K. Seeger, Semiconductor Physics, Spring Series in Solid-State Sciences Vol. 40, 4th ed. (Springer, New York, 1989), p. 165.
10. J. M. Ziman, Electron and Phonon (Oxford University Press, London, 1960), p. 443.
11. M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein, and D. Stephani, Appl. Phys. Lett. 65, 3120 (1994).
12. W. C. Mitchel and P. M. Hemenger, J. Appl. Phys. 53, 6880 (1982).