MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 33-38

  Bour, D P ^a   Kneissl, M ^a   Hofstetter, D ^a   Romano, L T ^a   McCluskey, M ^a   Van De Walle, C G ^a   Krusor, B S ^a   Dunnrowicz, C ^a   Donaldson, R ^a   Walker, J ^a   Johnson, N M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ETCHING; ION BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; NITRIDES; OPTICALLY PUMPED LASERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM INDIUM NITRIDE; EPITAXIAL DEPOSITION; ION BEAM ETCHING; QUANTUM WELL SEMICONDUCTOR EPITAXIAL LAYERS; THRESHOLD CURRENT DENSITY;

HETEROJUNCTIONS;

EID: 0033528965     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00412-7     Document Type: Article

References (24)

1. Nakamura S., Senoh M., Iwasa N., Nagahama S. Appl. Phys. Lett. 67:1995;1868-1870.
2. S. Nakamura, IEEE Circuits Devices (1995) 19-23.
3. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y. Jpn. J. Appl. Phys. 35:1996;74-76.
4. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., Kiyoku H. Appl. Phys. Lett. 69:1996;4056-4058.
5. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., Kiyoku H. Appl. Phys. Lett. 69:1996;1477-1479.
6. Nakamura S. IEEE J. Sel. Topics Quantum Electron. 3:1996;712-718.
7. Akasaki I., Amano H., Sota S., Sakai H., Tanaka T., Koike M. Jpn. J. Appl. Phys. 34:1995;1517-1519.
8. Akasaki I., Amano H. J. Electrochem. Soc. 141:1994;2266-2271.
9. Itaya K., Onomura M., Nishio J., Sugiura L., Saito S., Suzuki M., Rennie J., Nunoue S., Yamamoto M., Fujimoto H., Kokobun Y., Ohba Y., Hatakoshi G., Ishikawa M. Jpn. J. Appl. Phys. 35:1996;1315-1317.
10. Kuramata A., Domen K., Soejima R., Horino K., Kubota S., Tanahashi T. J. Cryst. Growth. 189/190:1998;826-830.
11. J. Edmond, G. Bulman, H. S. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S. Sheppard, G. Negley, D. Slater, Proc. Int. Conf. Nitride Semiconductors (ICNS-97) (1997) 448-449.
12. Mack M.P., Abare A.C., Aizcorbe M., Kozodoy P., Keller S., Mishra U., Coldren L.A., DenBaars S.P. J. Cryst. Growth. 189/190:1998;837-840.
13. Nakamura F., Kobayashi T., Asatsuma T., Funato K., Yanashima K., Hashimoto S., Naganuma K., Tomioka S., Miyajima T., Morita E., Kawai H., Ikeda M. J. Cryst. Growth. 189/190:1998;841-845.
14. Kneissl M., Hofstetter D., Bour D.P., Donaldson R., Walker J., Johnson N.M. J. Cryst. Growth. 189/190:1998;846-849.
15. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. J. Cryst. Growth. 189/190:1998;820-825.
16. Götz W., Johnson N.M., Walker J., Bour D.P., Street R.A. Appl. Phys. Lett. 68:1996;667-669.
17. Neugebauer J., Van deWalle C.G. Phys. Rev. B. 50:1994;8067.
18. Neugebauer J., Van deWalle C.G. Proc. Mater. Res. Soc. Symp. 395:1996;645.
19. J. Neugebauer, C.G. Van de Walle, Proc. ICPS-23, World Scientific, Singapore, 1996, pp. 2849.
20. Neugebauer J., Van deWalle C.G. Appl. Phys. Lett. 68:1996;1829-1831.
21. Stampfl C., Van deWalle C.G. Appl. Phys. Lett. 72:1998;4.
22. Adesida I., Ping A.T., Youtsey C., Dow T., Khan M.A., Olsen D.T., Kuznia J.N. Appl. Phys. Lett. 65:1994;889-891.
23. Kneissl M., Bour D.P., Johnson N.M., Romano L., Krusor B., Donaldson R., Walker J., Dunnrowicz C., Bringans R. Appl. Phys. Lett. 72:1998;1539-1541.
24. Hofstetter D., Thorton R.L., Kneissl M., Bour D.P., Dunnrowicz C. Appl. Phys. Lett. 73:1998;1928-1930.